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个人简介
Haruki Yokoyama was born in Kochi, Japan, on March 7, 1965. He
received the B.S. and M.S. degrees in electrical engineering from Hiroshima University, Hiroshima, Japan, in 1987 and
1989, respectively, and the Ph.D. degree in applied physics from Tohoku University, Sendai, Japan, in 1996.
In 1989, he joined the Nippon Telegraph and Telephone (NTT) LSI Laboratories, Kanagawa, Japan. Since 1989, he has
been involved in research and development work on the epitaxial growth technologies of III–V compound
semiconductors using metal–organic vapor phase epitaxy. He is currently with the NTT Device Technology
Laboratories, Kanagawa.
Dr. Yokoyama is a Member of the Japan Society of Applied Physics.
研究兴趣
论文共 169 篇作者统计合作学者相似作者
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NASA Formal Methods: 15th International Symposium, NFM 2023, Houston, TX, USA, May 16–18, 2023, Proceedingspp.37-61, (2023)
Japanese Journal of Applied Physicsno. 6 (2022)
2021 IEEE International Conference on Software Maintenance and Evolution (ICSME) (2021): 437-447
2019 IEEE International Conference on Software Architecture Companion (ICSA-C)pp.267-274, (2019)
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作者统计
#Papers: 174
#Citation: 3058
H-Index: 25
G-Index: 46
Sociability: 6
Diversity: 3
Activity: 1
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