基本信息
浏览量:8
![](https://originalfileserver.aminer.cn/sys/aminer/icon/show-trajectory.png)
个人简介
D. Craig Capell received the A.A.S. degree in electronic engineering technology from Durham Technical College, Durham, NC, in 1988.
He has been developing novel semiconductor processsing techniques for power and microwave devices made using advanced wide band gap semiconductors like SiC and GaN. Since joining Cree, Inc., Durham, in 1993, he has been primarily responsible for process optimization of power FETs, power rectifiers, and microwave FETs in the Advanced Device Fabrication Laboratory. These processing techniques include reactive ion etching for fast and accurate etching of SiC and GaN, novel MOS processing for high-channel mobilities, advanced metallization for wide band gap Schottky rectifiers, and passivaton stacks for ultra-high-voltage devices. He has optimized photolithograhy techniques for achieving extremely small linewidths. He was responsible for the process optimization and extending the voltage and current ratings of high-power JBS and p-i-n rectifiers, UMOSFETs, ACCUFETs, BJTs, GTOs, FCTs, and Schottky diodes. ˛Prior to joining Cree, Inc., he was involved with process development and project leadership roles with Harris Semiconductor, Melbourne, FL, as well as GE Semiconductor, Research Triangle Park, Durham.
研究兴趣
论文共 11 篇作者统计合作学者相似作者
按年份排序按引用量排序主题筛选期刊级别筛选合作者筛选合作机构筛选
时间
引用量
主题
期刊级别
合作者
合作机构
Electronics Lettersno. 1 (2003)
加载更多
作者统计
#Papers: 11
#Citation: 427
H-Index: 9
G-Index: 11
Sociability: 3
Diversity: 2
Activity: 0
合作学者
合作机构
D-Core
- 合作者
- 学生
- 导师
数据免责声明
页面数据均来自互联网公开来源、合作出版商和通过AI技术自动分析结果,我们不对页面数据的有效性、准确性、正确性、可靠性、完整性和及时性做出任何承诺和保证。若有疑问,可以通过电子邮件方式联系我们:report@aminer.cn