Nonresonant Terahertz Detector Based on Improved N‐Polar AlGaN/GaN Plasma Wave High‐Electron‐Mobility Transistors

Yang Dai, Ruosong Yuan,Yukun Li, Leiyu Gao, Yiting Zhang, Pengzhan Wang,Yunyao Zhang,Xiaoyi Lei,Han Zhang,Wu Zhao

physica status solidi (b)（2024）

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Ga-polar,high-electron-mobility transistors,noise equivalent power,N-polar,plasma wave,responsivity,terahertz detectors

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