Effect of Source Electrostatic Interaction on the Off-State Leakage Current of P-Gan Gate HEMTs
IEEE ELECTRON DEVICE LETTERS（2024）
关键词
Logic gates,MODFETs,HEMTs,Leakage currents,Electrostatics,Current measurement,Wide band gap semiconductors,p-GaN HEMTs,source electrostatic interaction,field plate,off-state leakage
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