Sputtered Aluminum Oxide and p+ Amorphous Silicon Back-Contact for Improved Hole Extraction in Polycrystalline CdSex Te1-x and CdTe Photovoltaics
2019 IEEE 46th Photovoltaic Specialists Conference (PVSC)(2019)
摘要
A thin layer of Al
2
O
3
at the back of CdSe
x
T
e1-x
/CdTe devices is shown to passivate the back interface and drastically improve surface recombination lifetimes and photoluminescent response. Despite this, such devices do not show an improvement in open-circuit voltage (V
OC.
) Adding a p
+
amorphous silicon layer behind the Al
2
O
3
bends the conduction band upward, reducing the barrier to hole extraction and improving collection. Further optimization of the Al
2
O
3
, amorphous silicon (a-Si), and indium-doped tin oxide (ITO) layers, as well as their interaction with the CdCl
2
passivation process, are necessary to translate these electro-optical improvements into gains in voltage.
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关键词
CdTe,Al2O3,a-Si,passivating oxides,photovoltaic cells,charge carrier lifetime
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