3.2 A 0.028mm² 32MHz RC Frequency Reference in 0.18μm CMOS with ±900ppm Inaccuracy from -40°C to 125°C and ±1600ppm Inaccuracy After Accelerated Aging.
IEEE International Solid-State Circuits Conference(2024)
摘要
RC-based frequency references can achieve medium inaccuracy (~1000ppm) with small chip area [1–6], and so can potentially replace bulky crystal- or MEMS-based frequency references in cost-sensitive IoT applications. However, due to the large and nonlinear temperature dependence of on-chip resistors, achieving lower inaccuracy requires complex temperature compensation schemes, thus increasing chip area [1–4]. A further challenge is their long-term frequency drift. Recently, it has been shown that P-type polysilicon (P-poly) resistors, which are widely used because of their low temperature coefficients, are highly susceptible to aging [4, 6]. Although the resulting drift (~5000ppm) of a P-poly-based RC frequency reference can be mitigated by periodically calibrating it against a duty-cycled reference oscillator based on more stable diffusion or via-metal resistors [4], this comes at the expense of much larger chip area.
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关键词
Μm CMOS,Scaling Factor,Current Source,End Of Phase,Oven Temperature,Temperature Coefficient,Parasitic Capacitance,Output Frequency,Nominal Frequency,Chip Area,Rc Values,Electromigration,Trimming Step,Long-term Drift,Allan Deviation,Box Method,Nominal Ratio
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