Sm and Mn doped enhancing the electrical properties of .68PMN-.32PT relaxor ferroelectric thin films

(1-x)Pb(Mg1/3Nb2/3)O3-xPbTiO3 (PMN-PT) has attracted attention due to its excellent electrical properties as a typical relaxor ferroelectric material. High-quality Mn-Sm co-doped 0.68PMN-0.32PT thin films were synthesized on the Pt/Ti/SiO2/Si substrates by sol-gel based on spin coating method. The results show that 1 mol% Mn-2 mol% Sm co-doped PMN-PT thin films have high dielectric constant (epsilon r similar to 1895) and relatively low dielectric loss (tan delta similar to .039) at 1 kHz. They also show superior ferroelectric polarization (Pmax similar to 53.71 mu C/cm2, Pr similar to 30.85 mu C/cm2) and high dielectric breakdown strength (similar to 1656.6 kV/cm), which are primarily due to the low leakage current density (similar to 10-7 A/cm2). This work suggests a practical approach to enhance the dielectricity, piezoelectricity, and ferroelectricity of PMN-PT thin films.