STRENGTH PROPERTIES OF ELECTRON IRRADIATED FILMS OF NEGATIVE NOVOLAC
 PHOTORESISTS ON MONOCRYSTALLINE SILICON

The adhesive and strength properties of electron-irradiated NFR 016D4 photoresist films for explosive lithography deposited on the surface of KDB-10 single-crystalline silicon wafers by centrifugation have been studied. It has been experimentally established that electron irradiation leads to warping and partial detachment of the NFR 016D4 photoresist film from the silicon substrate. Irradiated photoresist films behave like brittle materials. A significant decrease in crack resistance and adhesion to the silicon substrate of irradiated photoresist films was observed. caused by radiation-induced processes at the photoresist/silicon interface.