Bandgap Formation in Graphene Doped with BN, TiO2, Al2O3 and ZnO by Sintering Process

Nanoelectronics emphasises graphene and bandgap opening, where a larger band gap is helpful for different electronic applications. Here, we report on the larger bandgap opening and tuneable bandgap in graphene doped with BN, TiO2, Al2O3 and ZnO by the novel sintering process. In this study, the electronic band structure of graphene is studied systematically in the presence of doping by UV–vis spectroscopy; studies revealed a bandgap formation in graphene. For the first time, a significant and larger bandgap as high as 2.65 eV is observed for graphene-95 % TiO2-3 % BN-2 % combination, and the TiO2 doping and isoelectronic BN opened the π π* band gap of graphene. The quantum confinement effect confined the holes and electrons in the nanoscale semiconductors. As a result, the semiconductor’s band gap increases the energy difference between the empty and filled states. The experimental results are varified by a theoretical approach called machine learning. The current findings open the door to creating graphene-based devices doped with BN, TiO2, Al2O3, and ZnO tailored for band gaps.