Scalable Spin-to-Charge Conversion Effect in the Inverse Spin Hall Nanodevice

A major challenge to realizing a highly energy-efficient magneto-electric spin-orbit (MESO) logic device is the small signal response of ferromagnetic spin state readout by inverse spin Hall (ISH) effect, which makes it difficult to meet the practical device design. Here, we present a scalable T-shape W/CoFeB ISH device with tunable spin-to-charge conversion effects. The ISH signal appeared to increase with reducing the W channel width, achieving 40mΩ with a channel width down to 95nm. Tuning the sputtering dc power can further adjust the ISH signal. Our finding provides a pathway to improve the ISH signal in patterned devices that is beneficial for developing next-generation spintronic logic devices.