Flexible Forming Free Resistive Memory Device with 2D Material $\text{MoSe}_{2}$ as Switching Layer
2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)(2023)
Abstract
In this paper, 2D
$\text{MoSe}_{2}$
is demonstrated as a promising active material for forming free flexible RRAM devices. Fabricated
$\text{Ag}/\text{MoSe}_{2}/\text{ITO}$
flexible RRAM devices exhibited excellent resistive switching with very low SET/RESET voltages
$\sim\pm 1$
V, high data retention
$> 10^{4} \ \mathrm{s}$
, on/off current ratios of 10
2
to 10
3
, and endurance for more than 100 cycles. These results indicate that
$\text{MoSe}_{2}$
can be a suitable switching layer candidate for high-performance RRAM devices for flexible and large area electronics.
MoreTranslated text
Key words
bipolar resistive switching,forming free,RRAM and flexible electronics
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