High breakdown electric field in $\text{Ba}_{\mathrm{x}}\text{Sr}_{1-\mathrm{x}}\text{TiO}_{3}/\text{SiO}_{2}$ dielectric stack formed on (010) $\beta$-Ga2O3 substrates

A. Miesle,A.E. Islam,E. Shin,G. Subramanyam,K.D. Leedy, S. Ganguli, D.M. Dryden,K.J. Liddy,K.D. Chabak, A.J. Green

2023 Device Research Conference (DRC)（2023）

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关键词

atomic-layer deposition,BaxSr1-xTiO3-SiO2-Ga2O3:Sn/int,breakdown electric field,Ga2O3:Sn/sur,high permittivity dielectric thin films,leakage current,MOS capacitors,pulsed laser deposition,semiconductor doping,wide bandgap semiconductors

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