The Field-Effect Transistor Based on a Polyyne-Polyene Structure Obtained via PVDC Dehydrochlorination

We report on the formation of the field-effect transistor based on a polyyne-polyene structure. Polyvinylidene chloride (PVDC) drop casting and its subsequent dehydrochlorination in KOH solution allowed for the formation of porous polyyne-polyene material, which was analyzed via transmission electron microscopy, Fourier-transform infrared spectroscopy, and Raman spectroscopy, revealing the presence of sp- and sp(2)-hybridized chained fragments in the structure. The polyyne-polyene-based field-effect transistor showed a transconductance of 3.2 nA/V and a threshold voltage of -0.3 V. The obtained results indicate that polyyne-polyene-based transistors can be used as discrete elements of molecular electronics and that subsequent studies can be aimed toward the development of selective polyyne-polyene-based gas sensors with tunable sensitivity.