Advances in Inversion Channel Mobility Model for 4H-SiC MOS Devices

Channel mobility modeling is of great significance for the development and analysis of SiC MOS devices due to complex SiC/SiO 2 interface. In the context of the physical understanding of carrier scattering mechanisms, this paper presented an overview of the research progress and limitations of 4H-SiC channel mobility model. The intrinsic and extrinsic factors responsible for the degeneration of SiC channel mobility were extensively investigated to provide theoretical guidance for accurate channel mobility modeling. Furthermore, the electrical characterization methods of SiC channel mobility through current-voltage characteristics and Hall-effect measurement were discussed in detail. A simulation methodology was developed to reproduce experimental data through parameter identification technique, which could achieve piecewise calibration of multiple model parameters for SiC channel mobility and SiC/SiO 2 interface characteristics. The comprehensive understanding of SiC channel mobility can provide a great value for simulation modeling and device analysis.