Increasing the Efficiency of Triple-Junction Solar Cells Due to the Metamorphic InGaAs Subcell

The efficiency of GaInP/GaAs/InxGa1 – xAs triple-junction solar cells obtained by replacing (in the widely used “classical” GaInP/GaAs/Ge heterostructure) the lower germanium with InxGa1 – xAs subcell formed using the metamorphic growth technology has been investigated. Based on an original approach, the optimal indium concentration in the narrow-gap subcell has been found. The main parameters of InxGa1 – xAs subcells with an indium concentration from x = 0.11 to 0.36 were determined and were used to calculate the IV characteristics of GaInP/GaAs/InxGa1 – xAs solar cells. It has been determined that at x = 0.28 the efficiency of the triple-junction solar cell increases by 3.4