Calculations and Implications of the Electronic Spectra of Straight and Kinked Dislocations in Silicon and Diamond

A review is given of the calculations to date dealing with the structural and electronic properties of dislocations in covalently bonded semi-conductors and insulators. Recent results for both straight and kinked dislocations are described, especially for the formation and migration energies of kinks on 90° and 30° partials in silicon and diamond as well as their electronic levels. Some implications of these calculations to dislocation motion are also given.