A Novel Integrated 1.2 kV Double-sided Cooled Power Module

This work presents a novel and integrated half-bridge silicon carbide double-sided cooled power module. The unique design features include 45-degree vertical connection blocks to provide maximum heat dissipation path, low temperature co-fired ceramic-based interposer to provide mechanical strength and electrical isolation, integrated gate driver boards, and integrated temperature sensors. The fabricated module is then switched at 160 A and 800 V bus voltage. The junction-to-case thermal resistance of the module package is only 0.05 K/W. The power loop inductance is 11 nH and the gate loop inductance is 15 nH.