Surface oxygen vacancy engineering on TiO 2 (101) via ALD technology for simultaneously enhancing charge separation and transfer.

Titanium oxide molecular layers containing extensive SOV content (11.4-16.2%) have been constructed on (101) TiO nanotubes through a precisely controlled atomic layer deposition technique, in which the charge separation efficiency and surface charge transfer efficiency are increased to 28.2% and 89.0%, respectively, about 17 and 2 times those of the initial TiO nanotubes.