Кристаллизация И Формирование Карбида Кремния В Двухслойных Аморфных Пленках Кремний-Углерод При Электронном Облучении

А.И. Сидоров, Е.Я. Лекс,О.А. Подсвиров, А.Ю. Виноградов

Žurnal tehničeskoj fiziki（2022）

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Abstract

It is shown that the irradiation by focused electron beam with electron energy of 10 keV of two-layer amorphous silicon-carbon films 60 nm thick results in films partial crystallization. Moreover, in the irradiated zone the layer of crystalline silicon carbide with luminescent properties is formed. The observed effects are confirmed by methods of Raman spectroscopy and by luminescence spectra.

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