Characterization of Double HfZrO 2 Based FeFET Toward Low-Voltage Multi-Level Operation for High Density Nonvolatile Memory

Z.-F. Lou,C.-Y. Liao,K.-Y. Hsiang, C.-Y. Lin, Y.-D. Lin,P.-C. Yeh, C.-Y. Wang,H.-Y. Yang,P.-J. Tzeng, T.-H. Hou,Y.-T. Tang,M. H. Lee

2022 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA)（2022）

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摘要

A double HfZrO2 (HZO) ferroelectric field-effect transistor (FeFET) is demonstrated with ultra-low operating voltage as |VP/E| = 3 V to achieve multilevel cell (MLC) nonvolatile memory (NVM). Compared to a single FE-HZO FeFET, the metal/ferroelectric/metal/ferroelectric/Si (MFMFS) structure results not only in a reduction of VP/E, but also provides a feasible memory window (MW) of 1.9 V for MLC operation. In addition, the metal/ferroelectric/insulator/ ferroelectric/Si (MFIFS) FeFET exhibits a MW as high as >2.5 V. The double HZO FeFET has potential to improve power consumption and enhance memory density for MLC-NVM applications.

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关键词

Low voltage,Power demand,Nonvolatile memory,Memory management,Voltage,Very large scale integration,FeFETs

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