An Investigation of HZO-Based n/p-FeFET Operation Mechanism and Improved Device Performance by the Electron Detrapping Mode

Ferroelectric field-effect transistor (FeFET) is a promising nonvolatile memory device because of its CMOS compatibility, scalability, and energy efficiency. However, the device physics has not been studied well, which hinders FeFET development and process design kit (PDK) construction. In this article, we report a comprehensive understanding of the n/p-FeFET operation mechanism as a nonvolatile m...