Novel Zirconium Formamidinate Precursor for the ALD of ZrO 2

Zirconium tetrakis( N,N ’-dimethylformamidinate), Zr-FAMD, was synthesized and evaluated as a precursor for the deposition of zirconium oxide (zirconia) thin films via Atomic Layer Deposition (ALD) technique. Zr-FAMD has a high vapor pressure and displays an exceptionally high thermal stability; it is thus well-suited to be used as a precursor for the deposition of zirconia thin films. Zr-FAMD is a more ideally-suited precursor than tetrakisethylmethylaminozirconium or TEMAZr, which has an equivalent vapor pressure, but is plagued with a rather low thermal stability, limiting its usefulness at high deposition temperatures. Zr-FAMD can be used to deposit zirconia thin films at temperatures as high as 375 °C without evidence of decomposition.