高密度メモリ用途の遷移金属酸化物に基づいた4F 2 セレクタレスクロスバーアレイ2Mb ReRAMの集積
Lee Hyung Dong,Sook-Joo Kim, K. Cho,Hyunsang Hwang,Hyejung Choi,Juyeab Lee,Seung Hwan Lee,Ho-Seok Lee, Junkyo Suh, Chung S.-O.,Yong Soo Kim, Kwang-Ok Kim,W. S. Nam,J. T. Cheong,Jumsoo Kim, S. Chae, Hwang E.-R.,S. N. Park,Y. S. Sohn, C. G. Lee,H. S. Shin,Kee-jeung Lee,Kwon Hong, H. G. Jeong, K. M. Rho, Y. K. Kim,Suock Chung,Janice H. Nickel, Jianhua Yang, Hyeon-Koo Cho,Frederick A. Perner, R.S. Williams,J. H. Lee,Sung Kye Park, Hong S.-J. symposium on vlsi technology（2012）
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