A 56-Gb/s Optical Receiver With 2.08-A Noise Monolithically Integrated into a 250-nm SiGe BiCMOS Technology
IEEE Transactions on Microwave Theory and Techniques(2022)
摘要
In this article, a monolithically integrated single-polarization optical receiver with automatic gain control is presented that shows state-of-the-art performance in terms of bandwidth (BW) and noise. A low-noise technique is applied in a monolithically integrated optical receiver featuring automatic gain and dc-offset cancellation control loops. The electronic and photonic components are fabricated on the same silicon substrate using IHP's 0.25-mu m SiGe BiCMOS EPIC technology. The optical receiver features a high tunable transimpedance gain of 66 dB omega at a large optoelectrical BW of 34 GHz and an input-referred noise current of 2.08 mu A $_{rms}$ while consuming only 205 mW of power.
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关键词
Optical receivers,Resistors,Silicon germanium,BiCMOS integrated circuits,Capacitance,Thermal resistance,Thermal noise,Broadband amplifiers,low noise amplifiers,optical receiver,SiGe BiCMOS,silicon photonics,transimpedance amplifiers (TIAs)
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