69‐3: Examination of Degradation Analysis of p‐i‐n Type OLEDs Devices

Daichi Shirakura, Shinji Okamura,Yoshihiko Taguchi,Hikaru Takano, Takahiro Shibamori,Takashi Miyamoto,Junichiro Sameshima

SID Symposium Digest of Technical Papers（2020）

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摘要

Degradation analysis was conducted to p‐i‐n type OLED devices. PL, LDI‐MS, and GCIB‐TOF‐SIMS revealed the degraded layer was EML and molecular formula of the degradation product. GCIB‐TOF‐SIMS clarified the change of n‐dopant with the degradation.

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oleds,degradation analysis

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