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2836 Surface stress measurement of single crystal silicon microstructures using Raman spectroscopic uniaxial tensile testing

The proceedings of the JSME annual meeting(2007)

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摘要
This paper describes an experimental analysis of surface stress distribution on single crystal silicon (SCS) microstructures using laser Raman spectroscope. A handmade tensile tester was employed to apply an uniaxial tensile stress to SCS specimen with a 270nm-height and 4μm-square SCS convex structure in the gauge section. In room temperature, Raman spectroscope measured surface stress, applied by the tensile tester, around the convex. The stress distribution obtained from two-curve fitting of Raman spectrum was in good agreement with that estimated by finite element analysis.
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关键词
single crystal silicon microstructures,surface stress measurement,raman
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