A Comparison of The Different Gaas Phemt Logic Families Characteristics

D. V. Bilevich,A. S. Salnikov,A. A. Popov,A. A. Kalentyev,A. E. Goryainov

2021 Dynamics of Systems, Mechanisms and Machines (Dynamics)（2021）

引用 1|浏览4

暂无评分

摘要

A comparison of the GaAs pHEMT logic families characteristics is presented. Six logic families were compared. A comparison showed that the use of high value resistors allows reducing the occupied area by 1.6 times and the power consumption by 5 times of the NOT gate for DCFL circuits. It was found that the use of such resistors in the BFL circuits allows to reducing the occupied area by 2 times an...

查看译文

关键词

Resistors,Power demand,PHEMTs,Gallium arsenide,Logic gates,Conductivity,Foundries

AI 理解论文

溯源树

样例

生成溯源树，研究论文发展脉络

Chat Paper

正在生成论文摘要