Effect of Transition Mechanism of Photon-Induced Carriers on Time Jitter of GaAs Photoconductive Semiconductor Switches
IEEE transactions on electron devices/IEEE transactions on electron devices(2021)
摘要
To investigate the effect of photon-induced carrier transition mechanism on switch stability, the time jitters of 2-mm-gap gallium arsenide photoconductive semiconductor switches (GaAs PCSSs) are compared when triggered by lasers of two different wavelengths, i.e., 1064 and 532 nm. The time jitter model is proposed to clarify the synergy of the multiple adjustable macroparameters of trigger conditions. The carrier valley occupation rates with respect to bias electric field are simulated, where the influence of the microprocedures, i.e., carrier generation, carrier intervalley transition, and carrier transportation, is considered. Our experimental results illustrate that the time jitter of the GaAs PCSS exhibits a nonmonotonous behavior and obtains a local minimum at similar to 3 kV/cm for 1064 nm; however, it shows a monotonous decreaseto a constant value at about 3 kV/cm for 532 nm. Our analysis indicates that the discrepancy in GaAs PCSS time jitter is attributed to the difference in the relative fluctuation of the carrier velocity affected by the carrier valley occupation rate. This article is of great significance in optimizing the stability of GaAs PCSS and pulse power system by adjusting the macroparameters in the time jitter model.
更多查看译文
关键词
Carrier intervalley transition,carrier valley occupation rate,gallium arsenide photoconductive semiconductor switch (GaAs PCSS),time jitter
AI 理解论文
溯源树
样例
![](https://originalfileserver.aminer.cn/sys/aminer/pubs/mrt_preview.jpeg)
生成溯源树,研究论文发展脉络
Chat Paper
正在生成论文摘要