Influence Of Surface Relaxation On The Contrast Of Threading Edge Dislocations In Synchrotron X-Ray Topographs Under The Condition Of G . B=0 And G . B X L=0

Residual contrast of threading edge dislocations is observed in synchrotron back-reflection X-ray topographs of 4H-SiC epitaxial wafers recorded using basal plane reflections where both g . b = 0 and g . b x l = 0. The ray-tracing simulation method based on the orientation contrast formation mechanism is applied to simulate images of such dislocations by applying surface relaxation effects. The simulated contrast features match the observed features on X-ray topographs, clearly demonstrating that the contrast is dominated by surface relaxation. Depth profiling indicates that the surface relaxation primarily takes place within a depth of 5 mu m below the surface.