Validation Analysis And Test Of Semiconductor Device Simulator Gsres

Basic drift-diffusion model (DDM) of carriers in semiconductor using in a numerical simulator: General Semiconductor Radiation Effect Simulator (GSRES), is studied in order to identify and reduce the numerical errors of this semiconductor simulator. Numerical approximations of the semiconductor device EMP effect simulator is analysed. Numerical errors caused by approximation of the field distribution of lattice temperature, and approximation the of the recombination rate and generation rate are studied. Application range of this simulator is analysed according to the numerical errors caused by these approximations. Terms of the simulator that should be improved and enhanced precision are given.