Implications Of Acceptor Doping In The Polarization And Electrocaloric Response Of 0.9pb(Mg1/3nb2/3)O-3-0.1pbtio(3) Relaxor Ferroelectric Ceramics
JOURNAL OF MATERIALS CHEMISTRY C(2021)
摘要
In ferroelectrics, the effects of acceptor doping on electrical and electromechanical properties, often referred to as the "hardening" effects, are commonly related to domain-wall pinning mechanisms mediated by acceptor-oxygen-vacancy defect complexes. In contrast, the hardening effects in relaxor ferroelectric materials are complicated by the nano-polar nature of these materials, the associated dynamics of the polar nano-regions and their contribution to polarization, and the characteristic freezing transition between the ergodic and the non-ergodic phases. To shed light on this issue, in this study, we investigate the role of the acceptor (Mn) doping on the temperature-dependent broadband dielectric permittivity, high-field polarization-electric-field (P-E) hysteresis and electrocaloric (EC) response of 0.9Pb(Mg1/3Nb2/3)O-3-0.1PbTiO(3) (PMN-10PT) relaxor ferroelectric ceramics. The results suggest strong pinning effects, mediated by the acceptor-oxygen-vacancy defect complexes, which manifest similarly both in the ergodic and in the non-ergodic phases of PMN-10PT as revealed by the doping-induced suppression of the frequency dispersion of the permittivity maximum and pinched high-field hysteresis loops. In addition to these pinning effects, the Mn doping reduces the freezing temperature (T-f) by similar to 50 degrees C with respect to the undoped PMN-10PT. This is reflected in the EC response, which becomes less temperature dependent, making defect engineering a valuable approach for designing EC materials with an extended operational temperature range.
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关键词
electrocaloric response,ceramics,doping,polarization
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