Fabrication Of Cnt Field Emitter Array Using Polymer Insulator

This article reports the fabrication process nanotube (CNT) field emitter array (FEA) with polymer insulator that is suitable for large area FEA. Gate holes of insulator were formed by wet-etching (WE) instead of reactive ion etching (RIE), because the CNT is damaged and contaminated by the RIE at the end of the etching. The WE process could achieve fine gate holes with little under-cut configuration. A FEA panel of 1.5inch in diagonal was fabricated by this method and showed good emission uniformity compared to by the RIE.