Giant Tunneling Magnetoresistance In Mgo-Based Magnetic Tunnel Junctions And Its Industrial Applications

Shinji Yuasa,Rie Matsumoto,Akio Fukushima,Hitoshi Kubota,Taro Nagahama,David D. Djayaprawira,Koji Tsunekawa,Hiroki Maehara,Yoshinori Nagamine,Motonobu Nagai,Shinji Yamagata,Yoshishige Suzuki,Masaki Mizuguchi,Alina M. Deac,Koji Ando

IEEE NMDC 2006: IEEE NANOTECHNOLOGY MATERIALS AND DEVICES CONFERENCE 2006, PROCEEDINGS（2006）

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Abstract

First-principle theories predicted an extremely high magnetoresistance (MR) ratio over 1000% in epitaxial Fe(001)/MgO(001)/Fe(001) MTJs. We have fabricated fully epitaxial Fe-Co(001)/MgO(001)/Fe-Co(001) MTJs and textured CoFeB/MgO(001)/CoFeB MTJs and achieved giant MR ratios above 400% at room temperature. An ultra-low resistance-area (RA) product indispensable for magnetic sensor application has also been achieved in CoFeB/MgO(001)/CoFeB MTJs. The giant TMR effect in MgO-based MTJs is the key for next-generation spintronic devices.

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Key words

magnetic tunnel junction,magnetoresistance,MgO,tunneling,spintronics

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