The Fabrication Of Three-Layer Silicon Stacked Antenna

In this paper, a three-layer stacked structure patch antenna operating at W-band based on Three-Dimensional Silicon Integration Technology is proposed, designed and measured. The antenna is an 8*8 patch array antenna, made of three layers of high resistance silicon (HRSi) wafers. Through silicon via (TSV) technique and vertical interconnect technique are carried out to divide the feeding networks, signal interposer and radiation patches into different wafers, and then the multilayer wafer stacking technique is used to bond the wafers to form the three-layer structure antenna. The designed antenna is fabricated and measured, and the measured results basically match the simulation results. It is demonstrated that the fabrication process proposed in this paper is function well. The measured results show operating frequency band of antenna is 90.3-98.7GHz, and the peak gain is about 10dBi.