电化学沉积法制备一维氧化锌的研究
Journal of Beijing Institute of Petro-chemical Technology(2014)
Abstract
采用不同条件电化学沉积法在氧化铟锡(IT O )导电玻璃基底上自组装生长了一维ZnO阵列。利用X射线衍射仪(XRD)和场发射扫描电镜(FESEM )对其结构和形貌分别进行表征。结果表明,以种晶预生长时间为40 s的样品为衬底,Zn2+浓度为0.005 mol/L ,CTAB浓度为0.005 mol/L ,HMT浓度为0.01 mol/L ,沉积时间为10 min ,沉积电位为0.90 V条件下,能够制备出高度取向且致密的一维氧化锌阵列。
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