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偏置条件对国产SiGeBiCMOS器件总电离辐射效应的影响

Libin WANG,Xin WANG,Xue WU,Xiaolong LI,Mohan LIU,Wu LU

Journal of Radiation Research and Radiation Processing（2020）

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Abstract
本文研究了1 Gy(Si)/s的高剂量率辐照下,偏置条件对国产0.35μm SiGe BiCMOS工艺器件电离总剂量(Total ionizing dose,TID)辐射效应的影响.结果表明:高剂量率辐照下,国产SiGe BiCMOS器件具有非常好的抗电离总剂量效应能力,可以达到数十千戈瑞,基极电流对辐射更敏感.不同偏置条件下,器件TID累积到12 kGy(Si)时,反偏损伤最大,零偏次之,正偏增益退化最小.发现其主要机制是高剂量率辐射及外加偏置引入的边缘电场影响氧化层中诱导氧化物陷阱电荷和界面态产生,导致基极辐射敏感区增大,基极电流增大,从而使器件增益减小.
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