Highly reliable and high speed InGaAs PIN photodetector on Si by heteroepitaxy

Bowen Song,Bei Shi,Si Zhu,Simone Suran Brunelli,Jonathan Klamkin

2021 ASIA COMMUNICATIONS AND PHOTONICS CONFERENCE (ACP)（2021）

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Abstract

InGaAs photodiodes were realized on Si by heteroepitaxy, demonstrating the dark current density of 0.45 mA/cm(2), responsivity of 0.7 A/W, bandwidth of 11.2 GHz and 17 years equivalent room-temperature operation.

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Key words

heteroepitaxy,photodiodes,dark current density,room-temperature operation,high speed PIN photodetector,responsivity,frequency 11.2 GHz,time 17.0 year,temperature 293 K to 298 K,Si,InGaAs

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