Highly reliable and high speed InGaAs PIN photodetector on Si by heteroepitaxy
2021 ASIA COMMUNICATIONS AND PHOTONICS CONFERENCE (ACP)(2021)
Abstract
InGaAs photodiodes were realized on Si by heteroepitaxy, demonstrating the dark current density of 0.45 mA/cm(2), responsivity of 0.7 A/W, bandwidth of 11.2 GHz and 17 years equivalent room-temperature operation.
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Key words
heteroepitaxy,photodiodes,dark current density,room-temperature operation,high speed PIN photodetector,responsivity,frequency 11.2 GHz,time 17.0 year,temperature 293 K to 298 K,Si,InGaAs
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