Effect of oxygen concentration on minority carrier lifetime at the bottom of quasi-single crystalline silicon
Materials Science in Semiconductor Processing(2021)
摘要
The formation mechanism of red zone in casting silicon ingots was investigated. Oxygen and metal distribution in ingots of crystalline Si were determined and analyzed. It was found that metal impurities is not the only factor to form bottom low minority carrier lifetime region. Interstitial oxygen with relative high concentration also decreases carrier lifetime at ingot bottom.
更多查看译文
关键词
Casting silicon,Minority carrier lifetime,Oxygen concentration,Red zone
AI 理解论文
溯源树
样例
生成溯源树,研究论文发展脉络
Chat Paper
正在生成论文摘要