Microwave dielectric properties of BaV2O6 ceramics with ultra-low sintering temperature

Microwave dielectric properties of BaV2O6 ceramics were investigated for the first time. The BaV2O6 ceramic was prepared by the solid-state ceramic route. The phase constitution, microstructure, and compatibility with aluminum electrode were investigated using XRD, Raman spectra and SEM. The results confirmed that that pure phase BaV2O6 could be obtained in the sintering temperature range of 525 degrees C-600 degrees C. With an increase in the sintering temperature, the dielectric constant (epsilon r) and quality factor (Qxf) first increase and decrease thereafter, the temperature coefficient of resonant frequency (tau f) changes slightly. The BaV2O6 ceramic sintered at 575 degrees C/4 hr exhibited good microwave dielectric properties of epsilon(r) = 11.5, tau(f) = 38 ppm/degrees C and Qxf = 21 800 GHz (at 10.1 GHz). Moreover, the material had a chemical compatibility with aluminum powders, which represented a promising candidate material for ULTCC applications.