Analysis of electronical properties of Bismuth and Silicene antidot in the presence of strain using the four-orbital tight-binding method

•Tight-binding model predicts band structure and band gap in two-dimensional antidote lattice.•Presence of biaxial strain on the Bismuth and Silicene antidote lattice is sufficient to change their electronic properties.•Size of holes in two dimensional sheet as the antidote lattice points are effective on the band structures.