Filamentary Statistical Evolution from Nano-Conducting Path to Switching-Filament for Oxide-RRAM in Memory Applications
2019 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM)（2019）
关键词
filamentary statistical evolution,oxide-RRAM,memory applications,nanoconducting path generation,switching-filament formation,ReRAM devices,Gumbel statistics,maxima-value distribution,switching-filament conductance,minima-value Weibull model,Poisson distribution,nanopath generation,underlying spatial statistics,binomial distribution,filament-formation,area-dependent single-filament formation,RRAM scaling,RRAM technology
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