A 40-nm CMOS 90-GHz Power Amplifier

A 90-GHz transformer-based power amplifier (PA) is presented in this paper. The amplifier consists of two common-source pseudo-differential stages. To improve the amplifier gain and bandwidth performance in a compact size, a low loss impedance matching network is utilized. Test results show that a small-signal gain of 14 dB is achieved at 90 GHz and its bandwidth is larger than 15 GHz. Under 1V supply voltage, its 1-dB compression output power (OP _1dB ) is 13 dBm. Fabricated in a 40 nm CMOS technology, the chip occupies a core area of about 0.3 mm ² .