The Structure And Surface Properties Investigation Of Heavy Ion Irradiated Tlfes2 Crystal
INTERNATIONAL JOURNAL OF MODERN PHYSICS B(2019)
摘要
In this work, radiation resistance and radiation defects formation of chain semiconductor antiferromagnetic TlFeS2 monocrystal have been investigated. The sample was irradiated by heavy ions at different doses up to 2.0 x 10(13) ion.cm(-2). The influence of radiation with heavy xenon ions on the structure of the irradiated layer has been studied and it has shown that, as the radiation dose increases, the number of peaks of the periodicity of the atomic clusters of the nanosize surface decreases exponentially.
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关键词
Implantation, radiation defects, surface morphology, semiconductor, ionizing radiation
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