High Performance In-Zn-O FET with High On-current and Ultralow (<10−20 A/μm) Off-state Leakage Current for Si CMOS BEOL Application
2019 26th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)(2019)
Abstract
We have demonstrated and experimentally verified the advantages of In-Zn-O (InZnO) channel compared with In-Ga-Zn-O (InGaZnO) channel for high performance oxide semiconductor channel field effect transistor (FET) with both ultralow off-state leakage current and high on-current. Compared with InGaZnO FET, high mobility (>30 cm
2
/Vs) and reduction of source/drain (S/D) parasitic resistance by 75% were achieved by InZnO FET. Analysis of a Schottky barrier height at S/D contact and a band offset between oxide semiconductor channel and gate insulator SiO2 revealed that the reduction of S/D parasitic resistance originated from a lowering of conduction band minimum by InZnO channel. Moreover, ultralow (<;10
-20
A/μm) off-state leakage current characteristics including not only S/D leakage current but also gate leakage current were confirmed to maintain even at thin gate insulator with an equivalent oxide thickness of 6.2 nm.
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Key words
gate insulator,In-Ga-Zn-O channel,high performance oxide semiconductor channel field effect transistor,ultralow off-state leakage current,InGaZnO FET,Schottky barrier height,InZnO channel,gate leakage current,ultralow off-state leakage current characteristics,conduction band,Si CMOS BEOL application,size 6.2 nm,InGaZnO,SiO2
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