Very Low Temperature Epitaxy of Group-IV Semiconductors for Use in FinFET, Stacked Nanowires and Monolithic 3D Integration

As CMOS scaling proceeds with sub-10 nm nodes, new architectures and materials are implemented to continue increasing performances at constant footprint. Strained and stacked channels and 3D-integrated devices have for instance been introduced for this purpose. A common requirement for these new technologies is a strict limitation in thermal budgets to preserve the integrity of devices already present on the chips. We present our latest developments on low-temperature epitaxial growth processes, ranging from channel to source/drain applications for a variety of devices and describe options to address the upcoming challenges.