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Evaluation of (bi, La)4Ti3012 Thin Film for Capacitor-Type Synapses

International Meeting for Future of Electron Devices, Kansai(2018)

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摘要
We evaluated (Bi, La) 4 Ti 3 O 12 (BLT) thin films for capacitor-type synapses. The ferroelectric thin films were formed by a sol-gel method. The hysteresis characteristics of the ferroelectric thin films were evaluated using a Sawyer-Tower-Circuit. The results show that the larger the film thickness of the ferroelectric thin film, the more useful it is as synapses.
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关键词
(Bi, La)4Ti3O12(BLT),capacitor-type synapses,sol-gel method,Sawyer-Tower-Circuit
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