Titanium (Germano-)Silicides Featuring 10−9 Ω·cm2 Contact Resistivity and Improved Compatibility to Advanced CMOS Technology

In this work, we discuss three novel Ti (germano-)silicidation techniques featuring respectively the pre-contact amorphization implantation (PCAI), the TiSi co-deposition, and Ti atomic layer deposition (ALD). All three techniques form TiSix(Gey) contacts with ultralow contact resistivity (ρc) of (1–3)×10−9 Ω·cm2 on both highly doped n-Si and p-SiGe substrates: these techniques meet pc requirement of 5–14 nm CMOS technology and feature unified CMOS contact solutions. We further discuss the compatibility of these techniques to the realistic CMOS transistor fabrication.