1.3 μm InAs/GaAs quantum dot lasers on silicon with GaInP upper cladding layers

We report on the first electrically pumped continuous-wave (CW) InAs/GaAs quantum dot (QD) laser grown on Si with a GaInP upper cladding layer. A QD laser structure with a Ga0.51In0.49P upper cladding layer and an Al0.53Ga0.47As lower cladding layer was directly grown on Si by metal-organic chemical vapor deposition. It demonstrates the postgrowth annealing effect on the QDs was relieved enough with the GaInP upper cladding layer grown at a low temperature of 550 degrees C. Broad-stripe edge-emitting lasers with 2-mm cavity length and 15-mu m stripe width were fabricated and characterized. Under CW operation, room-temperature lasing at similar to 1.3 mu m has been achieved with a threshold density of 737 A/cm(2) and a single-facet output power of 21.8 mW. (c) 2018 Chinese Laser Press