Reversible Photo-Induced Doping in WSe2 Field Effect Transistors.

Xuyi Luo,Kraig Andrews,Tianjiao Wang,Arthur Bowman,Zhixian Zhou,Ya-Qiong Xu

Nanoscale（2019）

引用 20|浏览23

暂无评分

摘要

We report a reversible photo-induced doping effect in two-dimensional (2D) tungsten diselenide (WSe2) field effect transistors on hexagonal boron nitride (h-BN) substrates under low-intensity visible light illumination (∼10 nW μm−2).

查看译文

AI 理解论文

溯源树

样例

生成溯源树，研究论文发展脉络

Chat Paper

正在生成论文摘要