Transition of Dominant Lattice Sites of Mg in InN:Mg Revealed by Raman Scattering

The behavior of Mg dopants in InN films grown by molecular beam epitaxy was studied by Raman scattering in a wide Mg concentration ([Mg]) range from 1 x 10(16) to 4 x 10(21) cm(-3). Transition of dominant lattice sites of Mg dopants was investigated through a diffusion-collision model based on Mg-related local vibrational modes, which was further confirmed through stress analysis. It was found that Mg-i and Mg-In-N-In-i are the dominant sites of Mg dopants at [Mg] < 1.8 x 10(20) cm(-3), while the complex of Mg-In-N-Mg-i dominates with further increasing [Mg]. This study provides an insight on the behavior of Mg and would be helpful for achieving effective p-type doping in InN.